Search results for "Variable-range hopping"

showing 3 items of 3 documents

Transport and magnetic properties of La1−xCaxMnO3-films (0.1<x<0.9)

2000

Abstract By laser ablation we prepared thin films of the colossal magnetoresistive compound La1−xCaxMnO3 with doping levels 0.1 10 13 Ω have been measured with an electrometer setup. While the transport data indicate polaronic transport for the metallic samples above the Curie temperature the low-doped ferromagnetic insulating samples show a variable range hopping like transport at low-temperature.

Laser ablationMaterials scienceCondensed matter physicsMagnetoresistanceFerromagnetismDopingCurie temperatureElectrical and Electronic EngineeringElectrometerThin filmCondensed Matter PhysicsVariable-range hoppingElectronic Optical and Magnetic MaterialsPhysica B: Condensed Matter
researchProduct

Raman, electron microscopy and electrical transport studies of x-ray amorphous Zn-Ir-O thin films deposited by reactive DC magnetron sputtering

2015

Zn-Ir-O thin films on glass and Ti substrates were deposited by reactive DC magnetron sputtering at room temperature. Structural and electrical properties were investigated as a function of iridium concentration in the films. Raman spectrum of Zn-Ir-O (61.5 at.% Ir) resembles the spectrum of rutile IrO2, without any distinct features of wurtzite ZnO structure. SEM images indicated that morphology of the films surface improves with the iridium content. EDX spectroscopy and cross-section SEM images revealed that the films growing process is homogeneous. Crystallites with approximately 2-5 nm size were discovered in the TEM images. Thermally activated conductivity related to the variable range…

Materials scienceAnalytical chemistrychemistry.chemical_elementSputter depositionVariable-range hoppingAmorphous solidsymbols.namesakechemistrysymbolsIridiumCrystalliteThin filmRaman spectroscopyWurtzite crystal structureIOP Conference Series: Materials Science and Engineering
researchProduct

Quantum fluctuations of the conductance in the hopping regime

1992

Abstract The results of the numerical scaling approach for localization are used to discuss the statistical behaviour of the zero-temperature conductance of disordered systems of finite size. In the asymptotic regime of strong localization, where transport is dominated by hopping processes, explicit expressions for the temperature dependence of the fluctuations of the conductance and the resistance are obtained by assuming that the phase coherence length is given by the Mott hopping law. It is shown that the temperature dependence of the fluctuations of the logarithm of the conductance/resistance does not depend on the assumptions concerning the statistics of the hopping processes. The resu…

PhysicsPhase coherenceLogarithmCondensed matter physicsGeneral Chemical EngineeringGeneral Physics and AstronomyConductanceStatistical physicsConductance quantumScalingVariable-range hoppingQuantum fluctuationPhilosophical Magazine B
researchProduct